Intel: Intel receives first-generation High-NA EVU Scanner from ASML after seven years

In a January 4 announcement, Intel revealed that it has finally received a first-generation Twinscan EXE:5000 High-NA extreme ultraviolet (EUV) lithography scanner, which it ordered from ASML seven years ago. This scanner is set to be assembled by both companies in the next few months. 

The  High numerical aperture (High-NA) scanner is capable of producing more than 200 wafers per hour, and the technology is expected to be mass-produced and inserted into Intel’s post-18A node sometime in 2025.

Dr. Ann Kelleher, executive vice president and general manager of Technology Development at Intel said, “Intel’s focus is to stay at the forefront of semiconductor lithography technology and we’ve been building our EUV expertise and capacity over the last year. Working closely with ASML, we will harness High-NA EUV’s high-resolution patterning as one of the ways we continue Moore’s Law and maintain our strong history of progression down to the smallest of geometries.”